刘向军

发布者:张兰芳发布时间:2019-09-05浏览次数:23995


刘向军 博导、研究员


Prof. LIU Xiangjun

微纳机电系统与集成电路研究 所长


Director,Institute of Micro/Nano Electromechanical System and Integrated Circuit




邮箱:xjliu@dhu.edu.cn


Email: xjliu@dhu.edu.cn

电话:021-67874277


Phone:021-67874277

地址:上海市松江区人民北路29994号学院楼5057,  201620


OfficeRoom 5057, No.4 College Building, 2999   North Renmin Rd, Songjiang, Shanghai, P.R.C, 201620

个人简介|Biography

刘向军,现是kaiyun官方登录入口研究员、博士生导师,微纳机电系统与集成电路团队负责人2009年获新加坡南洋理工大学及数据存储研究院理学博士学位。曾先后任日本日立研发中心研究员(2009-2010);加拿大阿尔伯塔大学国家纳米研究院博士后研究员(2010-2012);新加坡科技局高性能计算研究院科学家(2012-2019)

Dr Liu is currently a research professor in the College of Mechanical Engineering, and director of Institute of Micro/Nano Electromechanical System at Donghua University (DHU). He received his Ph.D. degree from Nanyang Technological University and Data Storage Institute, Singapore in 2009. Prior to joining DHU, he worked as Researcher in Hitachi R&D Centre (2009-2010), Post-doctoral Research Fellow in National Institute for Nanotechnology at University of Alberta, Canada (2010-2012), and Scientist in Institute of High Performance Computing, A*STAR, Singapore (2012-2019).

研究方向|Research Areas

      微结构物性调控   |Micro-structure properties

      微纳机电系统工程| Micro/Nano electromechanical system

      微器件热扩散管理|Thermal management in micro-devices

      智能传感器与集成电路 | AI Sensor and Integrated Circuit 

获奖与项目|Awards and Projects:

2019上海市海外高层次人才(引进) |High-level talents from overseas in Shanghai

2020上海市高层次人才计划(海外) | High-level Talents-Plan in Shanghai

2021上海市首届“探索者计划”项目 |Research Fund from “Explorer Plan” in Shanghai: 功率芯片能量输运机理和高导低阻热界面材料的研究

2021国家自然科学基金”外国优秀青年学者”项目 |Research Fund for International Excellent Young Scientists

       2022入选国家“高端外国专家”引进计划 | National-level Foreign Expert Project

       2023国家自然科学基金面上项目 | National Natural Science Foundation of China General Project



主讲课程|Courses

工程导论  |Introduction to Engineering

微纳米结构与系统物理基础(全英文) |Micro/Nano Structures and Systems: Basic Principles

芯片先进材料和制备技术 | Advanced Semiconductor Materials and Fabrication Technologies

集成电路制造技术及其实践

近期发表论文|Publications

1.Wang R, Zhu X, Li Y, Xiong D, Ma J, Gu P, Li S, Chen G, Lai N C, Yang J, Liu X, Xiong Y. Experimental evidence of diffusion-dominated thermal transport in amorphous diamond-like carbon nanowires. Appl. Phys. Lett. 2026, 128: 111906.

2.Sun J, Wang B, Sun J, Wang R, Ullah A, Liu Y, Hu D, Deng Y, Xiong Y, Gu P, Chen G, Liu X. Unveiling the role of grain boundaries in driving in-plane conductive filament formation in MoS₂ neuromorphic devices. Appl. Phys. Lett. 2026, 128: 061601.

3.Wang Q, Du M, Wu X, Chen Z, Liu X, Tang G. Thermal transport across interface between layered graphene and substrate. Int. J. Heat Mass Transf. 2026, 261: 128598.

4.Huang Y, Ullah A, Liu Y, Sun J, Xiong Y, Chen G, Liu X. Electric field and mechanical stretching-induced structural ordering in epoxy resin. Mol. Simul. 2026: 1–15.

5.Sun J, Li S, Tong Z, Shao C, Xie H, An M, Zhang C, Zhu X, Huang C, Wang Q, Xiong Y, Liu X. Diverse responses in lattice thermal conductivity of wurtzite semiconductors. Adv. Sci. 2025, 13(2): e14910.

6.Sun J, Liu X, Zhang C, Shao C, Zhu X, Zhong J, Wang S, Liu Q, An M, Li S. Self-heating aggravation in MOSFETs. Int. Commun. Heat Mass Transf. 2025, 169: 109667.

7.Sun J, Li S, Shao C, Tong Z, An M, Yao Y, Hu Y, Zhu X, Liu Y, Wang R, Liu X, Frauenheim T. Unlocking high hole mobility in diamond. Appl. Phys. Rev. 2025, 12: 011408.

8.Wang H, Liu Y, Dong X, Ullah A, Sun J, Zhang C, Xiong Y, Gu P, Chen G, Liu X. Interface-driven electrothermal degradation in GaN-on-diamond HEMTs. Nanomaterials 2025, 15(14): 1114.

9.Wang R, Xiong Y, Sun J, Zhou Y, Song G, Chen G, Liu X. Remarkably suppressed lattice thermal conductivity of InAs nanowires. Appl. Phys. Lett. 2025, 127(2): 022202.

10.Wang Q, Shao C, Xiong Y, Li S, Wang R, Sun J, Liu Y, Liu X. Unlocking phonon dynamics at interfaces. Int. J. Heat Mass Transf. 2025, 250: 127318.

11. Zhao X, Zheng F, Li Y, Song G, Zhou Y, Xiong Y, Liu X. Flexible thermoelectric generator for body heat harvesting. Therm. Sci. Eng. Prog. 2025, 63: 103750.

12.Sun J, Liu X, Xiong Y, Yao Y, Yang X, Shao C, Wang R, Li S. Phonon thermal transport in 2D GaN. Appl. Phys. Lett. 2025, 126: 112112.

13.Liu X, Wang D, Wang B, Wang Q, Sun J, Xiong Y. Deep neural network MD for AlGaN alloys. J. Phys.: Condens. Matter 2025, 37: 015901.

14.Sun J, Li S, Tong Z, Shao C, An M, Zhu X, Zhang C, Chen X, Wang R, Xiong Y, Frauenheim T, Liu X. Giant enhancement of hole mobility in 4H-SiC. Nano Lett. 2024, 24(34): 10569–10576.

15.Liu X, Wang B, Jia K, Wang Q, Wang D, Xiong Y. Machine learning potential for MoS₂/WS₂. J. Appl. Phys. 2024, 135: 205107.

16.Wang R, Xiong Y, Yang J, Liu Z, Li S, Chen G, Chen K, Liu X. Ultrahigh thermal conductance of point contact. Mater. Today Phys. 2024, 45: 101469.

17.Wang Q, Xiong Y, Shao C, Li S, Zhang J, Zhang G, Liu X. Defect engineering in 2D/3D interfaces. Small Methods 2024: 2400177.

18.Sun J, Li S, Tong Z, Shao C, Chen X, Liu Q, Xiong Y, An M, Liu X. Electron–phonon interactions in GaN. Phys. Rev. B 2024, 109: 134308.

19.Wang Q, Zhang J, Xiong Y, Li S, Chernysh V, Liu X. Atomic-scale surface engineering for giant thermal transport enhancement across 2D/3D van der Waals interfaces. ACS Appl. Mater. Interfaces 2023, 15(2): 3377–3386.

20.Huang Z, Wang Q, Liu X, Liu X. First-principles based deep neural network force field for molecular dynamics simulation of N–Ga–Al semiconductors. Phys. Chem. Chem. Phys. 2023, 25: 2349–2358.

21.Wang Q, Deng Y, Wang R, Liu X. Interface engineering moderated interfacial thermal conductance of GaN-based heterointerfaces. Acta Phys. Sin. 2023, 72: 226301.

22.Li S, Tong Z, Shao C, Bao H, Frauenheim T, Liu X. Anomalously isotropic electron transport and weak electron–phonon interactions in hexagonal noble metals. J. Phys. Chem. Lett. 2022, 13: 4289–4296.

23.Liu X, Wang Q, Wang R, Wang S, Liu X. Impact of interfacial compositional diffusion on phonon scattering in GaN/AlN heterostructure. J. Appl. Phys. 2023, 133: 095101.

24.Li S, Tong Z, Shao C, Bao H, Frauenheim T, Liu X. Anomalously isotropic electron transport and weak electron–phonon interactions in hexagonal noble metals. J. Phys. Chem. Lett. 2022, 13: 4289–4296.

25.Wang X, Wang Q, Liu X, Huang Z, Liu X. Phosphorene grain boundary effect on phonon transport and phononic applications. Nanotechnology 2022, 33: 265704.

26.Ren K, Ma X, Liu X, Xu Y, Huo W, Li W, Zhang G. Prediction of 2D IV–VI semiconductors: Auxetic materials with direct gap and strong optical absorption. Nanoscale 2022, 14: 8463–8473.

27.Ren K, Qin H, Liu H, Chen Y, Liu X, Zhang G. Manipulating interfacial thermal conduction of 2D Janus heterostructure via thermo-mechanical coupling. Adv. Funct. Mater. 2022: 2110846.

28.Wang Q, Wang X, Liu X, Zhang J. Interfacial engineering for enhancement of interfacial thermal conductance in GaN/AlN heterostructure. J. Appl. Phys. 2021, 129: 235102.

29.Wang Q, Wang X, Liu X, Zhang J. Interfacial engineering for the enhancement of interfacial thermal conductance in GaN/AlN heterostructure. J. Appl. Phys. 2021, 129: 235102.

30.Li S Q, Liu X, Wang X, Liu H, Zhang G, Zhao J, Gao J. Eliminating edge electronic and phonon states of phosphorene nanoribbon by unique edge reconstruction. Small 2021, 18: 2105130.

31.Liu X, Yu Z, Zhang G, Zhang Y W. Remarkably high thermal-driven MoS₂ grain boundary migration mobility and its implications on defect healing. Nanoscale 2020, 12: 17746.

32.Wang B, Zhang C, Jia Q, Liu X, Yang G. Robust continuous sliding mode control for manipulator PMSM trajectory tracking system under time-varying uncertain disturbances. IEEE Access 2020, 8: 196618.

33.Liu X, Gao J, Zhang G, Zhao J, Zhang Y W. The remarkable role of grain boundaries in the thermal transport properties of phosphorene. ACS Omega 2020, 5: 17416.

34.Ren K, Liu X, Chen S, Cheng Y, Tang W, Zhang G. Remarkable reduction of interfacial thermal resistance in nanophononic heterostructures. Adv. Funct. Mater. 2020: 2004003.

35.Zhao Y, Liu X, Rath A, Wu J, Li B, Zhou W, Xie G, Zhang G, Thong J T L. Probing thermal transport across amorphous region embedded in a single crystalline silicon nanowire. Sci. Rep. 2020, 10: 821.

36.Liu X, Zhou H, Zhang G, Zhang Y.-W. The effects of curvature on the thermal conduction of bent silicon nanowire. J. Appl. Phys. 2019,125, 082525.

37.Liu X, Gao J, Zhang, G, Zhang Y.-W. Design of phosphorene/graphene heterojunctions for high and tunable interfacial thermal conductance. Nanoscale 2018,10. 19854.

38.Liu X, Zhang Y.-W. Thermal properties of transition-metal dichalcogenide. Chinese Physics B. 2018, 27, 034402.

39.Liu X, Gao J, Zhang, G, Zhang Y.-W. Unusual twisting phonons and breathing modes in tube-terminated phosphorene nanoribbons and their effects on thermal conductivity. Adv. Funct. Mater. 2017, 27, 1702776.

40.Liu X, Gao J, Zhang, G, Zhang Y.-W. MoS2-graphene in-plane contact for high interfacial thermal conduction. Nano Research, 2017,10, 2944.

41.Liu X, Zhang, G, Zhang Y.-W. Topological defects at the graphene/h-BN interface abnormally enhance its thermal conductance. Nano Letters 2016, 16(8), 4954.

42.Liu X, Zhang, G, Zhang Y.-W. Thermal conduction across one-dimensional interface between MoS2 monolayer and metal electrode. Nano Research 2016, 9, 2372.